Phone: | +31 (0)76 596 3820 | |
Fax: | +31 (0)76 596 3833 | |
E-mail: | info@avera.eu |
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Transistor KTB778 €16,00
Transistor NPN
• Vcbo: 120 Volt
• Ic: 10 ampere
• Power: 80 Watt
• Casing: TO-3P
Function: Q209
Used in: President Grant-2 Premium -
Renesas 2SC5508 €3,00
NPN Silicon RF Transistor
• For Low-Noise, High-Gain Amplification
• Vcbo: 15 Volt
• Ic: 35 mA
• Power: 115 mW
• Casing: M04 (Flat-Lead 4-PIN Thin-Type Super Minimold)Function: Q002
Used in Uniden UBC355CLT -
Transistor 2SB1132 €7,50
PNP Epitaxial Planar Silicon Transistor
• Vcbo: 40 Volt
• Ic: 2 Ampere
• Power: 2 Watt
• Casing: MPT3/SC62
Function: Q33
Used in: President Barry FM, Barry AM/FM -
Transistor 2SC1969 €17,00
Silicon NPN Transistor in TO-220 Package, 27MHz, 20W
High Power Gain: Gpe >12dB @Vcc =12V, f=27MHz, Po = 16W. -
Transistor 2SC5065 €2,00
Transistor NPN, 20 Volt, 15 mA, 0.1 Watt, Casing 2-2E1A (SC-70.
Function: Amplifier
Used in: Q2 in UBC75XLT -
RM SD1446 €70,00
Transistor NPN, 12.5 Volt, 50 MHz, P out = 70 W MIN. WITH 10 dB GAIN, Casing M-113.
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Sanyo 2SA2022 €6,00
PNP Epitaxial Planar Silicon Transistors
• Vcbo: 60 Volt
• Ic:7 Ampere
• Power: 2-18 Watt
• Casing: TO-220ML
Function: Q32
Used in: President Barry FM, Barry AM/FM -
Transistor ERF9530 €22,50
N-Channel RF Power Mosfet Transistor
• Vcbo: 12,5 Volt
• Power: 100 Watt PEP
• Casing: TO-3PN
The ERF9530 is a drop-in replacement and upgrade for the ERF7530 and other TO-3PN package MOSFET transistors. -
NEC 2SC5010-T1 €3,00
Transistor NPN
• Vcbo: 9 Volt
• Ic: 30 mA
• Pt: 125 mW
• Casing: 3-Pin Ultra Supper Mini Mold Package
Function: Q002 and Q003
Used in: UBC69XLT2 -
Transistor FQP13N10 MOSFET €22,00
N-Channel MOSFET, Casing TO-220, 100 Volt, 12.8 A, 180 MOhm.
Function: RF Driver, RF Final.
Used in: President Lincoln-2, CRT SS9900. -
Transistor IRFP26N60L €15,00
SMPS Mosfet, Vdss 600 Volt, Rds(on) 210 mOhm, Trr 170 ns, Id 26 Ampere, Casing TO-247AC
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Transistor MRF422 €120,00
Transistor, NPN, 28 Volt, 150 Watt PEP, 30 MHz, Casing 211-11, Style 1.
Used in RM Versions of BLA300, KL805 and others. -
Transistor RD06HHF1 €9,99
RD06HHF1 is a MOS FET type transistor specificallydesigned for HF RF power amplifiers applications.
High power gain: Pout>6W, Gp>16dB @Vdd=12.5V, f=30MHz.
For output stage of high power amplifiers inHF band mobile radio sets. -
Transistor RD16HHF1 €33,50
Silicon MOSFET Power Transistor 30MHz, 16W
Used for: President JFK-2, Cobra 200GTLDX: Driver of final transistor. -
Mitsubishi RD70HHF1 €39,00
Silicon MOSFET Power Transistor 30MHz, 70W
High power and High Gain: Pout >70W, Gp >13dB @Vdd=12.5V, f=30MHz; High Efficiency: 60% typ.on HF Band.
Used in: President Jackson-2. -
Transistor SD1407 €102,85
The SD1407 is a 28 V Silicon NPN planartransistor.
30 MHz, 28 Volts, IMD -30 dB, Common Emitter, Gold Metallization, P-Out = 125 W Min. with 15 dB Gain. -
MOSFET UFZ24N €18,00
N-Channel Power MOSFET, Casing TO-220.
Function: Q501, Final Transistor
Used in: President Grant-2