Spare Parts

Transistor, PNP, 120 Volt, 0.02 Ampere, 0.4 Watt, Casing M-Type.

Transistor, NPN, 120 Volt, 2 Ampere, 15 Watt, Casing *268.

Transistor NPN, 35 Volt, 7 Ampere, 50 Watt, Casing T-31E

Transistor NPN, 50 Volt, 15 Ampere, 125 Watt, Casing *303.

RD06HHF1 is a MOS FET type transistor specificallydesigned for HF RF power amplifiers applications.
High power gain: Pout>6W, Gp>16dB @Vdd=12.5V, f=30MHz.
For output stage of high power amplifiers inHF band mobile radio sets.

Silicon MOSFET Power Transistor 30MHz, 16W

Used for: President JFK-2, Cobra 200GTLDX: Driver of final transistor.

Silicon MOSFET Power Transistor 30MHz, 70W
High power and High Gain: Pout >70W, Gp >13dB @Vdd=12.5V, f=30MHz; High Efficiency: 60% typ.on HF Band.

Used in: President Jackson-2.