Transistor NPN
• Vcbo: 120 Volt
• Ic: 10 ampere
• Power: 80 Watt
• Casing: TO-3P

Function: Q209
Used in:  President Grant-2 Premium 

NPN Silicon RF Transistor
• For Low-Noise, High-Gain Amplification
• Vcbo: 15 Volt
• Ic: 35 mA
• Power: 115 mW
• Casing: M04 (Flat-Lead 4-PIN Thin-Type Super Minimold)

Function: Q002 
Used in Uniden UBC355CLT  

Transistor 

Function: Q203
Used in: President Grant-2 

PNP Epitaxial Planar Silicon Transistor
• Vcbo: 40 Volt
• Ic: 2 Ampere
• Power: 2 Watt
• Casing: MPT3/SC62

Function: Q33
Used in: President Barry FM, Barry AM/FM

Transistor NPN, 80 Volt, 6 Ampere, 20 Watt, Casing *301A.

Transistor NPN, 50 Volt, 15 Ampere, 125 Watt, Casing *303.

Silicon NPN Transistor in TO-220 Package, 27MHz, 20W
High Power Gain: Gpe >12dB @Vcc =12V, f=27MHz, Po = 16W.

Transistor NPN, 35 Volt, 7 Ampere, 50 Watt, Casing T-31E

Transistor NPN, 55 Volt, 0.15 Ampere, 0.2 Watt, Casing SC-59, SMD.

Transistor NPN, 45 Volt, 20 Ampere, 175 Watt, Casing 2-13B1.

Transistor, NPN, 80 Volt, 2 Ampere, 10 Watt, Casing TO-220.

Transistor, NPN, 120 Volt, 2 Ampere, 15 Watt, Casing *268.

Transistor, NPN, 35 Volt, 2 Ampere, 12 Watt, Casing *301A.

Transistor, NPN, 80 Volt, 6 Ampere, 20 Watt, Casing *301A.

Transistor, PNP, 160 Volt, 12 Ampere, 100 Watt, Casing TO-3PB.

Transistor, PNP, 120 Volt, 0.02 Ampere, 0.4 Watt, Casing M-Type.

Transistor, PNP, 50 Volt, 7 Ampere, 60 Watt, Casing SC-65

Transistor PNP, 60 Volt, 5 Ampere, 25 Watt, Casing TO-220.

Transistor.

Transistor NPN, 100 Volt, 15 Ampere, 115 Watt, Casing TO-3.

Transistor NPN, 40 Volt, 0.8 Ampere, 0.8 Watt, Casing TO-18.

 

Transistor NPN, 20 Volt, 15 mA, 0.1 Watt, Casing 2-2E1A (SC-70.

Function: Amplifier

Used in: Q2 in UBC75XLT

Transistor, PNP, 30 Volt, 1 Ampere, 0.9 Watt, Casing TO-92.

Transistor NPN, 12.5 Volt, 50 MHz, P out = 70 W MIN. WITH 10 dB GAIN, Casing M-113.

PNP Epitaxial Planar Silicon Transistors
• Vcbo: 60 Volt
• Ic:7 Ampere
• Power: 2-18 Watt
• Casing: TO-220ML

Function: Q32
Used in: President Barry FM, Barry AM/FM

N-Channel RF Power Mosfet Transistor
• Vcbo: 12,5 Volt
• Power: 100 Watt PEP
• Casing: TO-3PN

The ERF9530 is a drop-in replacement and upgrade for the ERF7530 and other TO-3PN package MOSFET transistors.

Transistor NPN
• Vcbo: 9 Volt
• Ic: 30 mA
• Pt: 125 mW
• Casing: 3-Pin Ultra Supper Mini Mold Package

Function: Q002 and Q003
Used in: UBC69XLT2

Transistor NPN, 35 Volt, 100 mA, 400 mW, Casing TO-92

Transistor NPN, 75 Volt, 1 Ampere, 5 Watt, Casing TO-126.

TB009, Transistor used near final in President Jackson-2

Transistor, Casing SOT343, Low Noise Silicon Bipolar RF Transistor.

Function: Q1
Used in: UBC75XLT 
Function: Q1
Used in UBC125XLT

Companion Part of ERF2030.

Companion Part of ERF2030.

Companion Part of ERF2030.

N-Channel MOSFET, Casing TO-220, 100 Volt, 12.8 A, 180 MOhm.

Function: RF Driver, RF Final.
Used in: President Lincoln-2, CRT SS9900.

SMPS Mosfet, Vdss 600 Volt, Rds(on) 210 mOhm, Trr 170 ns, Id 26 Ampere, Casing TO-247AC

Transistor.

Transistor NPN.

Transistor.

Transistor, NPN, 28 Volt, 150 Watt PEP, 30 MHz, Casing 211-11, Style 1.

Used in RM Versions of BLA300, KL805 and others.

Transistor NPN, 12.5 Volt, 50 Watt, Casing 211-07.

Transistor NPN, 12.5 Volt, 50 Watt, Casing SOT-120.

Transistor NPN, 12 Volt, 60 Watt, Casing SOT-123.

RD06HHF1 is a MOS FET type transistor specificallydesigned for HF RF power amplifiers applications.
High power gain: Pout>6W, Gp>16dB @Vdd=12.5V, f=30MHz.
For output stage of high power amplifiers inHF band mobile radio sets.

Silicon MOSFET Power Transistor 30MHz, 16W

Used for: President JFK-2, Cobra 200GTLDX: Driver of final transistor.

Silicon MOSFET Power Transistor 30MHz, 70W
High power and High Gain: Pout >70W, Gp >13dB @Vdd=12.5V, f=30MHz; High Efficiency: 60% typ.on HF Band.

Used in: President Jackson-2.

Transistor.

Used in versions of RM types: KL35, KL60,  KL200, KL200P, KL203, KL203P, KL503, KL503HD, KL703

Transistor, Casing TO-220..

Function: Driver.
Used in: RM KL503.

Transistor used in Uniden-Bearcat UBC200XLT and others.

N-Channel Power MOSFET, Casing TO-220.

Function: Q501, Final Transistor
Used in: President Grant-2