Transistors
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Transistor FQP13N10 MOSFET
N-Channel MOSFET, Casing TO-220, 100 Volt, 12.8 A, 180 MOhm.
Function: RF Driver, RF Final.
Used in: President Lincoln-2, CRT SS9900. -
Transistor IRFP26N60L
SMPS Mosfet, Vdss 600 Volt, Rds(on) 210 mOhm, Trr 170 ns, Id 26 Ampere, Casing TO-247AC
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Transistor MRF422
Transistor, NPN, 28 Volt, 150 Watt PEP, 30 MHz, Casing 211-11, Style 1.
Used in RM Versions of BLA300, KL805 and others. -
Transistor RD06HHF1
RD06HHF1 is a MOS FET type transistor specificallydesigned for HF RF power amplifiers applications.
High power gain: Pout>6W, Gp>16dB @Vdd=12.5V, f=30MHz.
For output stage of high power amplifiers inHF band mobile radio sets. -
Transistor RD16HHF1
Silicon MOSFET Power Transistor 30MHz, 16W
Used for: President JFK-2, Cobra 200GTLDX: Driver of final transistor. -
Mitsubishi RD70HHF1
Silicon MOSFET Power Transistor 30MHz, 70W
High power and High Gain: Pout >70W, Gp >13dB @Vdd=12.5V, f=30MHz; High Efficiency: 60% typ.on HF Band.
Used in: President Jackson-2. -
MOSFET UFZ24N
N-Channel Power MOSFET, Casing TO-220.
Function: Q501, Final Transistor
Used in: President Grant-2
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Transistor Mitsubishi 2SC1945 *FSOut of stock
Transistor NPN, 80 Volt, 6 Ampere, 20 Watt, Casing *301A.